EAB450M12XM3
Active - 450A 1200V SIC HALF-BRIDGE MODUL
Description:
450A 1200V SIC HALF-BRIDGE MODUL
EAB450M12XM3 Specification
Product Attribute
Attribute Value
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25℃
450A (Tc)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 450A, 15V
Vgs(th) (Max) @ Id
3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs
1330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
38000pF @ 800V
Operating Temperature
-40 ℃ ~ 175 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
-
EAB450M12XM3 Stock: 32025
5.0 / 5.0
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
France
