EPC2101
Active - GAN TRANS ASYMMETRICAL HALF BRID
Description:
GAN TRANS ASYMMETRICAL HALF BRID
EPC2101 Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25℃
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V, 1200pF @ 30V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
EPC2101 Stock: 19000
5.0 / 5.0
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
France
