EPC2106ENGRT
Discontinued - GAN TRANS 2N-CH 100V BUMPED DIE
Description:
GAN TRANS 2N-CH 100V BUMPED DIE
EPC2106ENGRT Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Product Status
Discontinued
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25℃
1.7A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600μA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
EPC2106ENGRT Stock: 10525
5.0 / 5.0
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
2021-06-10 07:32
Recu in 89 days, strip, to test
United States
