NTE5833
Active - DIODE GEN PURP 100V 3A DO4
Description:
DIODE GEN PURP 100V 3A DO4
NTE5833 Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
100 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 3 A
Speed
Standard Recovery >500ns, >200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
10 μA @ 100 V
Package / Case
DO-203AA, DO-4, Stud
Supplier Device Package
DO-4
Operating Temperature - Junction
-65 ℃ ~ 175 ℃
NTE5833 Stock: 15280
5.0 / 5.0
2023-04-06 01:44
Everything arrived as expected. Quality product and attentive and fast seller.
2023-04-05 20:24
In the absence of testing them
2022-12-17 03:56
Great Store, all OK. Thank you.
2023-04-06 14:43
not tried yet
2023-03-29 01:36
All correct, good packaging. Need to be tested.
Brazil
