NTE5887
Active - DIODE GEN PURP 800V 12A DO4
Description:
DIODE GEN PURP 800V 12A DO4
NTE5887 Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.26 V @ 38 A
Speed
Standard Recovery >500ns, >200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
12 mA @ 800 V
Package / Case
DO-203AA, DO-4, Stud
Supplier Device Package
DO-4
Operating Temperature - Junction
-65 ℃ ~ 175 ℃
NTE5887 Stock: 36940
5.0 / 5.0
2023-04-07 12:20
The quality is excellent, while it works.
2023-04-04 12:09
Everything ok recommended
2023-03-31 04:07
Seller and very quick delivery. Original product. As in the description. I recommend
2023-04-04 10:54
I haven't used it yet arrived
2023-04-06 08:13
Very accurate, very fast, advantageous
Germany
