2N7000

Active - MOSFET N-CH 60V 200MA TO92-3
Description:
MOSFET N-CH 60V 200MA TO92-3
2N7000 Specification
Product Attribute
Attribute Value
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
2N7000 Description
The STMicroelectronics 2N7000 is a widely used N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is known for its versatility and reliability in various electronic applications. This device is particularly popular in low-power switching applications, signal amplification, and as a general-purpose transistor in electronic circuits. Below is a detailed overview of the 2N7000, including its specifications, features, and typical applications.
### Key Features:
1. N-Channel MOSFET: The 2N7000 is an N-channel MOSFET, which means it uses electrons as charge carriers, providing better conductivity and efficiency compared to P-channel devices.
2. Low On-Resistance (R_DS(on)): The device features a low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications where efficiency is important.
3. High-Speed Switching: The 2N7000 is designed for fast switching applications, making it suitable for use in high-frequency circuits.
4. Compact Package: The MOSFET is available in a TO-92 package, which is a standard through-hole package that is easy to handle and mount on PCBs.
5. Thermal Performance: The 2N7000 is designed to handle significant power levels while maintaining a manageable temperature, thanks to its thermal characteristics.
### Specifications:
- Part Number: 2N7000
- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (V_DS): 60V
- Continuous Drain Current (I_D): 200mA (at 25°C)
- Pulsed Drain Current (I_D, pulsed): 400mA
- On-Resistance (R_DS(on)):
- Approximately 0.5Ω (at V_GS = 10V)
- Gate Threshold Voltage (V_GS(th)): 2V to 4V
- Maximum Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_g): 10 nC (at V_GS = 10V)
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-92 (3-pin through-hole)
### Applications:
The 2N7000 is suitable for a wide range of applications, including:
- Switching Applications: Used in low-power switching applications, such as turning on and off loads in various electronic devices.
- Signal Amplification: Can be used in analog circuits for signal amplification due to its high input impedance and low output capacitance.
- Level Shifting: Useful in level shifting applications where signals need to be converted between different voltage levels.
- Relay Drivers: Acts as a driver for relays in control circuits, allowing for the control of higher power loads with low-power signals.
- LED Drivers: Can be used to drive LEDs in various lighting applications.
### Conclusion:
The STMicroelectronics 2N7000 is a versatile and efficient N-channel MOSFET that offers low on-resistance, high-speed switching, and excellent thermal performance. Its compact TO-92 package makes it an ideal choice for a variety of applications, from consumer electronics to industrial equipment. With its reliable performance and wide range of specifications, the 2N7000 is a popular choice among engineers and designers looking to implement efficient switching and amplification solutions in their circuits.