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Home / Discrete Semiconductors / Diodes - Rectifiers - Single / PN Junction Semiconductor P3D06008G2

P3D06008G2

Active - DIODE SIL CARB 650V 26A TO263-2

P3D06008G2

PN Junction Semiconductor

Manufacturer:

PN Junction Semiconductor

Mfr Part #

Category:

Diodes - Rectifiers - Single

Datasheet:

Description:

DIODE SIL CARB 650V 26A TO263-2

P3D06008G2 Specification

Product Attribute

Attribute Value

Category

Diodes - Rectifiers - Single

Manufacturer

PN Junction Semiconductor

Series

P3D

Packaging

Tape & Reel (TR)

Product Status

Active

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650 V

Current - Average Rectified (Io)

26A

Voltage - Forward (Vf) (Max) @ If

-

Speed

No Recovery Time >500mA (Io)

Reverse Recovery Time (trr)

0 ns

Current - Reverse Leakage @ Vr

36 μA @ 650 V

Capacitance @ Vr, F

-

Mounting Type

-

Package / Case

TO-263-2

Supplier Device Package

TO-263-2

Operating Temperature - Junction

-55 ℃ ~ 175 ℃ (TJ)

P3D06008G2 Stock: 13025

History Price

$3.33000

Certificates

5.0 / 5.0

Jukka Laakso

Finland

2021-12-03 00:22

I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.

Kęstutis Darius

Lithuania

2021-12-27 06:22

The goods are very satisfied, the seller Thank you very much.

Justine Perrin

France

2021-06-10 07:32

Recu in 89 days, strip, to test

Lotte van der Veen

Netherlands

2021-11-23 06:50

All ok, thank you!

Hugo

Spain

2021-12-23 03:52

All right. Received within time

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