P3D12030K3

Active - DIODE SIL CARB 1.2KV 94A TO247-3
Description:
DIODE SIL CARB 1.2KV 94A TO247-3
P3D12030K3 Specification
Product Attribute
Attribute Value
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
94A
Voltage - Forward (Vf) (Max) @ If
-
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 μA @ 650 V
Supplier Device Package
TO-247-3
Operating Temperature - Junction
-55 ℃ ~ 175 ℃ (TJ)
P3D12030K3 Description
The PN Junction Semiconductor P3D12030K3 is a high-performance diode designed to handle high-voltage applications. This diode is used in a variety of electronic circuits requiring reliable and efficient rectification, such as power supplies, high-voltage circuits, and protection applications. Its robust design ensures stable performance even under demanding conditions.
### 1. General Information:
- Manufacturer: PN Junction Semiconductor
- Part Number: P3D12030K3
- Type: Rectifier Diode
- Package Type: TO-220F
### 2. Electrical Specifications:
- Reverse Voltage Rating (VR): 1200V
- Forward Voltage Drop (VF): 1.5V (typical) at IF = 3A
- Forward Current Rating (IF): 3A
- Peak Forward Surge Current (IFSM): 100A
- Reverse Recovery Time (trr): 150 ns (typical)
- Reverse Leakage Current (IR): 10 µA (typical) at VR = 1200V
- Power Dissipation (PD): 40W
- Junction Temperature (TJ): -40°C to +150°C
### 3. Performance Characteristics:
- High Reverse Voltage Rating: With a reverse voltage rating of 1200V, the P3D12030K3 is well-suited for high-voltage applications, providing effective rectification and protection.
- Low Forward Voltage Drop: The typical forward voltage drop of 1.5V at 3A ensures efficient power conversion with minimal energy loss.
- Fast Switching Speed: The reverse recovery time of 150 ns supports rapid switching applications, enhancing performance in high-speed circuits.
- High Surge Current Capability: Capable of handling peak surge currents of up to 100A, making it robust enough for applications with high transient conditions.
### 4. Features:
- TO-220F Package: The diode is housed in a TO-220F package, which provides efficient heat dissipation and ease of mounting on heat sinks.
- High-Voltage Capability: Designed to operate effectively in high-voltage environments, offering reliable rectification and protection.
- Fast Recovery Time: The fast reverse recovery time ensures minimal switching losses and improved circuit efficiency.
- Robust Surge Handling: The ability to withstand high surge currents enhances the diode’s durability and reliability.
### 5. Application Areas:
- Power Supplies: Used in power supply circuits for rectification and voltage regulation.
- High-Voltage Circuits: Suitable for circuits operating at high voltages where reliable rectification is essential.
- Surge Protection: Applied in protection circuits to safeguard against voltage spikes and surges.
- Switching Circuits: Ideal for high-speed switching applications due to its fast recovery time and low switching losses.
### 6. Compliance and Standards:
- RoHS Compliant: Yes, the diode adheres to the Restriction of Hazardous Substances directive, ensuring it is free from hazardous materials.
- Lead-Free: The diode is designed to be lead-free, in compliance with modern environmental standards.
### 7. Mechanical Specifications:
- Package Dimensions: The TO-220F package provides a large surface area for heat dissipation and easy mounting. Typical dimensions are approximately 10.16 mm x 4.95 mm x 4.1 mm.
- Pin Configuration: The TO-220F package includes three pins—anode, cathode, and a heat sink tab.
### 8. Electrical Characteristics Table:
| Parameter | Value | Conditions |
|--------------------------------------|------------------------------------|------------------------------------|
| Reverse Voltage Rating (VR) | 1200V | |
| Forward Voltage Drop (VF) | 1.5V (typical) | At IF = 3A |
| Forward Current Rating (IF) | 3A | |
| Peak Forward Surge Current (IFSM)| 100A | |
| Reverse Leakage Current (IR) | 10 µA (typical) | At VR = 1200V |
| Power Dissipation (PD) | 40W | Maximum |
| Junction Temperature (TJ) | -40°C to +150°C | |
| Reverse Recovery Time (trr) | 150 ns (typical) | |
### 9. Thermal and Physical Characteristics:
- Operating Temperature Range: -40°C to +150°C, allowing reliable operation in a variety of environmental conditions.
- Storage Temperature Range: -55°C to +150°C, ensuring stability during storage and handling.
- Thermal Resistance (Junction to Case): Typically around 3°C/W, which affects how efficiently heat is dissipated from the diode.
### 10. Typical Applications:
- Rectification in Power Supplies: Used to convert AC to DC in power supply circuits, offering high voltage tolerance and low energy loss.
- Protection in High-Voltage Circuits: Provides protection against voltage spikes and transient conditions in high-voltage applications.
- Fast Switching Circuits: Suitable for applications requiring rapid switching and minimal delay, such as in high-speed electronic systems.
### Conclusion:
The PN Junction Semiconductor P3D12030K3 is a high-performance rectifier diode designed to meet the demands of high-voltage and high-current applications. With its high reverse voltage rating, low forward voltage drop, and fast switching capabilities, it is ideal for use in power supplies, protection circuits, and high-speed switching applications. The TO-220F package ensures effective heat dissipation and ease of integration into various circuit designs. Its compliance with RoHS and lead-free standards underscores its alignment with modern environmental and safety requirements, making it a reliable choice for engineers seeking robust diode solutions in demanding applications.
P3D12030K3 Stock: 30050
5.0 / 5.0

2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.

2021-06-10 07:32
Recu in 89 days, strip, to test

2021-11-23 06:50
All ok, thank you!

2021-12-23 03:52
All right. Received within time

2021-02-06 23:42
Received perfectly. Welded a unit on its corresponding printed circuit board working perfectly to replace a faulty unit on an Arduino Nano plate.