NP33N06YDG-E1-AY

Active - MOSFET N-CH 60V 33A 8HSON
Description:
MOSFET N-CH 60V 33A 8HSON
NP33N06YDG-E1-AY Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 25 V
Power Dissipation (Max)
1W (Ta), 97W (Tc)
Operating Temperature
175 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSON
Package / Case
8-SMD, Flat Lead Exposed Pad
NP33N06YDG-E1-AY Description
Overview of Renesas Electronics NP33N06YDG-E1-AY
The Renesas Electronics NP33N06YDG-E1-AY is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and switching applications. This device is particularly known for its low on-resistance and high-speed switching capabilities, making it suitable for efficient power conversion and control in electronic circuits.
Key Features
- N-Channel MOSFET: The NP33N06YDG-E1-AY is an N-channel MOSFET, which is widely used in power applications due to its efficient conduction characteristics.
- Low On-Resistance: With a low R_DS(on), this MOSFET minimizes power losses during operation, enhancing overall efficiency in power management applications.
- High-Speed Switching: The device supports fast switching speeds, making it ideal for applications that require rapid on/off control, such as in switching power supplies and motor drivers.
- Thermal Performance: The NP33N06YDG-E1-AY is designed to handle high thermal loads, ensuring reliable operation even in demanding environments.
- Compact Package: The device is available in a compact DPAK package, which facilitates easy integration into various circuit designs while saving board space.
Specifications
- Maximum Drain-Source Voltage (V_DS): 60V
- Continuous Drain Current (I_D): 33A (at 25°C)
- Pulsed Drain Current (I_D, pulsed): 120A
- On-Resistance (R_DS(on)): 0.025Ω (typical at V_GS = 10V)
- Gate Threshold Voltage (V_GS(th)): 1V to 3V
- Total Gate Charge (Q_g): 30 nC (typical)
- Operating Temperature Range: -55°C to +150°C
- Package Type: DPAK (TO-252)
- Thermal Resistance, Junction to Case (RθJC): 3.5°C/W
Applications
The NP33N06YDG-E1-AY is suitable for a wide range of applications, including:
- Power Supplies: Used in switching power supplies for efficient voltage regulation and power conversion.
- Motor Control: Ideal for driving DC motors and stepper motors in various industrial and consumer applications.
- LED Drivers: Employed in LED lighting applications for efficient control of LED currents.
- Battery Management Systems: Utilized in battery protection circuits to manage charging and discharging processes effectively.
Conclusion
The Renesas Electronics NP33N06YDG-E1-AY is a robust and efficient N-channel MOSFET that meets the demands of modern electronic applications. With its low on-resistance, high-speed switching capabilities, and excellent thermal performance, it is an ideal choice for engineers looking to enhance the efficiency and reliability of their power management and control systems. Its versatility across various applications makes it a valuable component in the design of advanced electronic circuits.
NP33N06YDG-E1-AY Stock: 4120
5.0 / 5.0

2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.

2021-06-10 07:32
Recu in 89 days, strip, to test

2021-11-23 06:50
All ok, thank you!

2021-12-23 03:52
All right. Received within time

2021-02-06 23:42
Received perfectly. Welded a unit on its corresponding printed circuit board working perfectly to replace a faulty unit on an Arduino Nano plate.