NP34N055SLE-E1-AY

Obsolete - NP34N055 - POWER FIELD-EFFECT TR
Description:
NP34N055 - POWER FIELD-EFFECT TR
NP34N055SLE-E1-AY Specification
Product Attribute
Attribute Value
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25℃
34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
Power Dissipation (Max)
1.2W (Ta), 88W (Tc)
Operating Temperature
175 ℃
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (MP-3ZK)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
NP34N055SLE-E1-AY Description
Overview of Renesas Electronics NP34N055SLE-E1-AY
The Renesas Electronics NP34N055SLE-E1-AY is a high-performance N-channel MOSFET designed for a variety of applications, including power management, motor control, and industrial automation. This device is part of Renesas' advanced MOSFET family, known for its efficiency, reliability, and robust performance in high-voltage environments. The NP34N055SLE-E1-AY is particularly valued for its low on-resistance, high-speed switching capabilities, and thermal performance.
Key Specifications
- Type: The NP34N055SLE-E1-AY is an N-channel MOSFET, which allows for efficient current flow when a positive voltage is applied to the gate.
- Maximum Drain-Source Voltage (V_DS): The device has a maximum V_DS rating of 55V, making it suitable for applications that require reliable performance under moderate voltage conditions.
- Continuous Drain Current (I_D): The continuous drain current is rated at 34A at a case temperature of 25°C. This rating indicates the maximum current the MOSFET can handle continuously without overheating.
- On-Resistance (R_DS(on)): The NP34N055SLE-E1-AY features a low on-resistance of 0.015 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 1.0V and 2.5V, which is the voltage required to turn the MOSFET on and allow current to flow.
- Total Gate Charge (Q_g): The total gate charge is approximately 30 nC at a V_GS of 10V. This parameter is important for determining the switching speed and efficiency of the device.
- Operating Temperature Range: The NP34N055SLE-E1-AY is rated for an operating temperature range of -55°C to +150°C, making it suitable for use in harsh environments and industrial applications.
- Package Type: The device is available in a TO-220 package, which provides good thermal performance and ease of mounting in various applications.
Applications
The Renesas Electronics NP34N055SLE-E1-AY is versatile and can be utilized in various applications, including:
- Power Supplies: It is commonly used in switch-mode power supplies (SMPS) for efficient power conversion and regulation.
- Motor Control: The MOSFET is suitable for driving motors in industrial automation and robotics, where precise control and efficiency are required.
- Renewable Energy: It can be used in photovoltaic inverters and other renewable energy applications, where high efficiency and reliability are critical.
- Lighting Control: The device is also applicable in LED lighting control systems, providing efficient switching and dimming capabilities.
Design Features
- High Efficiency: The NP34N055SLE-E1-AY is designed for high efficiency, with low on-resistance and fast switching characteristics that reduce power losses.
- Robust Thermal Performance: The TO-220 package allows for effective heat dissipation, ensuring reliable operation even under high load conditions.
- Easy Integration: The device is designed for easy integration into various circuit designs, making it a popular choice among engineers.
- Protection Features: The NP34N055SLE-E1-AY includes built-in protection against overvoltage and thermal overload, enhancing its reliability in demanding applications.
Conclusion
The Renesas Electronics NP34N055SLE-E1-AY is a high-performance N-channel MOSFET that excels in a variety of power applications. With its robust specifications, including a high voltage rating, low on-resistance, and wide operating temperature range, it is an excellent choice for engineers and designers looking for reliable solutions in power management, motor control, and industrial automation. Its efficiency and thermal performance make it a valuable component in modern electronic systems, ensuring optimal performance and longevity.