CAB006A12GM3
Active - 1200V 2B HALF-BRIDGE,ALN
Description:
1200V 2B HALF-BRIDGE,ALN
CAB006A12GM3 Specification
Product Attribute
Attribute Value
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25℃
200A (Tj)
Rds On (Max) @ Id, Vgs
6.9mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs
708nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
20400pF @ 800V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
-
CAB006A12GM3 Stock: 41210
5.0 / 5.0
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
2021-06-10 07:32
Recu in 89 days, strip, to test
United States
