CAB760M12HM3
Active - 1.2 KV, 760A HIGH PERFORMANCE SI
Description:
1.2 KV, 760A HIGH PERFORMANCE SI
CAB760M12HM3 Specification
Product Attribute
Attribute Value
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25℃
1015A (Tc)
Rds On (Max) @ Id, Vgs
1.73mOhm @ 760A, 15V
Vgs(th) (Max) @ Id
3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs
2724nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
79400pF @ 800V
Operating Temperature
-40 ℃ ~ 175 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
CAB760M12HM3 Stock: 37650
5.0 / 5.0
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
2021-06-10 07:32
Recu in 89 days, strip, to test
2021-11-23 06:50
All ok, thank you!
2021-12-23 03:52
All right. Received within time
Finland
