WAS350M12BM3
Active - SIC, MODULE, 350A, 1200V, 62MM,
Description:
SIC, MODULE, 350A, 1200V, 62MM,
WAS350M12BM3 Specification
Product Attribute
Attribute Value
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25℃
417A (Tc)
Rds On (Max) @ Id, Vgs
5.2mOhm @ 350A, 15V
Vgs(th) (Max) @ Id
3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs
844nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
25700pF @ 800V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
-
WAS350M12BM3 Stock: 2190
5.0 / 5.0
2021-06-10 07:32
Recu in 89 days, strip, to test
2021-11-23 06:50
All ok, thank you!
2021-12-23 03:52
All right. Received within time
2021-02-06 23:42
Received perfectly. Welded a unit on its corresponding printed circuit board working perfectly to replace a faulty unit on an Arduino Nano plate.
2021-08-04 23:28
2 weeks for delivery. The chips work fine
France
