WAS530M12BM3
Active - SIC, MODULE, 530A, 1200V, 62MM,
Description:
SIC, MODULE, 530A, 1200V, 62MM,
WAS530M12BM3 Specification
Product Attribute
Attribute Value
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25℃
630A (Tc)
Rds On (Max) @ Id, Vgs
3.47mOhm @ 530A, 15V
Vgs(th) (Max) @ Id
3.6V @ 127mA
Gate Charge (Qg) (Max) @ Vgs
1362nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
38900pF @ 800V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
-
Netherlands
